Dual N-Channel MOSFET, 60V, 230mA, SOT-363 SMD

The 2N7002DW-7-F is a dual N-channel enhancement-mode MOSFET engineered for high-efficiency power management. Its design prioritises minimising the ON-state resistance (RDS(ON)) while maintaining superior switching performance, making it an ideal component for demanding electronic circuits.

This MOSFET offers a compelling combination of low ON-resistance and a low gate threshold voltage, which facilitates efficient control and reduces power loss. Its low input capacitance contributes to fast switching performance, enabling rapid response times in applications where speed is critical. Additionally, it features low input/output leakage, enhancing overall system efficiency and reliability.

Housed in an ultra-small surface-mount SOT-363 package, it is perfect for space-constrained PCB designs. The device is halogen-free and boasts a UL94V-0 flammability rating, ensuring it meets high standards for safety and environmental compliance in modern electronics.

With a robust specification including a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 230mA, it provides reliable performance in a compact form factor. Its maximum operating temperature of 150°C allows for use in environments with significant thermal demands.

This component is a versatile and reliable choice for designers seeking efficient power switching in a miniaturised, high-performance package.