INFINEON BSC093N04LS G N-Channel Power MOSFET, 40V, 49A, 7800µohm, PG-TDSON, S

The INFINEON BSC093N04LS G is a high-performance N-channel Power MOSFET, specifically optimised for synchronous rectification in switched mode power supplies (SMPS) commonly used in servers, desktops and tablet chargers. Its dramatically reduced gate charge and output charge enable high system efficiency and power density, making it an ideal choice for high-frequency switching and DC-DC converters.

This OptiMOS™ series MOSFET delivers highest system efficiency, less paralleling required, increased power density, and space saving, while also providing very low voltage overshoot and superior thermal resistance. These features make it highly reliable and efficient for a wide range of power management applications.

With a drain-source voltage of 40V and a continuous drain current of 49A, this MOSFET is robust and capable of handling demanding power requirements. The device is housed in a PG-TDSON transistor case and features surface mount for easy integration into compact circuit designs.

Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 40V
• Continuous Drain Current (Id): 49A
• Drain Source On State Resistance: 7800µohm
• Transistor Case Style: PG-TDSON
• Mounting: Surface Mount
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 1.2V
• Power Dissipation: 35W
• No. of Pins: 8 Pins
• Operating Temperature Max: 150°C
• Product Range: OptiMOS 3 Series

This power MOSFET is an excellent choice for engineers seeking high performance, efficiency, and reliability in their power management systems.