Infineon BSS126 N-Channel MOSFET 600V 21mA SOT-23

The Infineon BSS126 H6327 is a high-voltage N-channel depletion-mode SIPMOS® small-signal transistor, designed for reliable performance in a wide range of electronic applications. With a drain-source voltage of 600V and a continuous drain current of 21mA, this MOSFET delivers efficient switching and control in compact designs. Its SOT-23 surface-mount package makes it ideal for space-constrained circuits, while the Pb-free lead plating and halogen-free construction ensure compliance with modern environmental standards. The device is also AEC Q101 qualified, making it a robust choice for demanding automotive environments.

Key Features

• Depletion-mode technology enables normally-on operation, simplifying start-up circuits and power management.
• dV/dt rated for enhanced ruggedness in fast-switching applications.
• Qualified according to AEC Q101 for automotive reliability.
• Halogen-free and Pb-free lead plating for eco-friendly manufacturing.
• Low on-state resistance of 500 ohm minimizes conduction losses.

Applications

This versatile MOSFET is suitable for a variety of uses, including power supply start-up power, overvoltage protection, in-rush-current limiters, and offline voltage references. It is also well-suited for automotive, consumer electronics, power management, portable devices, and communications networking systems.

Specifications

• Channel Type: N Channel
• Drain Source Voltage: 600V
• Continuous Drain Current: 21mA
• On-State Resistance: 500ohm
• Package: SOT-23 (Surface Mount)
• Gate-Source Threshold Voltage Max: 2V
• Power Dissipation: 500mW
• Operating Temperature Max: 150°C
• Number of Pins: 3