Infineon BSS131 N-Channel MOSFET 240V 110mA SOT-23

The Infineon BSS131 H6327 is a high-quality N-channel Small Signal MOSFET, designed for a wide range of applications in power management, automotive, consumer electronics, motor drive control, and communications networking. This enhancement-mode transistor is qualified according to the stringent AEC-Q101 standard, ensuring reliability for demanding environments.

This MOSFET features avalanche rating, super logic level drive capability, and dV/dt rating, making it suitable for high-performance switching applications. As a green device, it complies with environmental standards. The transistor comes in a compact SOT-23 package, ideal for space-constrained designs.

With a drain-source voltage of 240V, continuous drain current of 110mA, and a low on-state resistance of 14 ohms, this MOSFET offers efficient performance. The device has a maximum power dissipation of 360mW, a gate-source threshold voltage of 1.4V, and can operate at temperatures up to 150°C. The surface mount package allows for easy integration into automated manufacturing processes.

Key Features:

• N-channel enhancement mode
• Avalanche rated for robust operation
• Super logic level drive (suitable for low voltage control)
• dV/dt rated for high-speed switching
• AEC-Q101 qualified for automotive applications
• Green (RoHS compliant) device

Specifications:

• Channel Type: N Channel
• Drain Source Voltage (Vds): 240V
• Continuous Drain Current (Id): 110mA
• Drain Source On State Resistance: 14 ohm
• Transistor Case Style: SOT-23
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 1.4V
• Power Dissipation: 360mW
• No. of Pins: 3 Pins
• Operating Temperature Max: 150°C
• Qualification: AEC-Q101