Infineon BSS308PE P-Channel MOSFET 30V 2A SOT-23
Infineon BSS308PE P-Channel MOSFET, 30V, 2A, low 0.08ohm Rds(on) in SOT-23 package. AEC-Q101 qualified for automotive use.
The Infineon BSS308PE H6327 is an advanced P-channel power MOSFET from the OptiMOS™ P3 small-signal family. Engineered with enhancement mode and logic level capability (rated at 4.5V), it is designed for efficient switching applications in space-constrained electronic designs. Its robust construction and high performance make it an excellent choice for modern power management solutions.
This transistor offers a low drain-source on-state resistance (Rds(on)) of just 0.08 ohm at a 10V test voltage, which minimises power loss and heat generation, enhancing overall system efficiency. It supports a continuous drain current of 2A and can handle a drain-source voltage of up to 30V, providing reliable operation in a variety of circuits. The component is qualified to the stringent AEC-Q101 automotive standard, ensuring high reliability and performance under demanding conditions, and includes built-in ESD protection for added durability.
Key Features & Benefits
- High-Performance Switching: Low Rds(on) and logic-level gate drive enable efficient power control.
- Automotive Grade: AEC-Q101 qualification makes it suitable for demanding automotive applications.
- Robust Design: Features a high maximum soldering temperature of 260°C and an operating temperature up to 150°C.
- Compact Footprint: Supplied in a surface-mount SOT-23 package, ideal for high-density PCB layouts.
- Enhanced Protection: Integrated ESD protection safeguards the device during handling and operation.
With its combination of low resistance, high current capability, and automotive-grade reliability, the Infineon BSS308PE is a versatile and dependable component for designers seeking to optimise performance and space.
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