Infineon HEXFET IRLL014NTRPBF N Channel MOSFET, 55V, 2A, SOT-223

The Infineon IRLL014NTRPBF is a fifth generation HEXFET® single N-channel Power MOSFET, designed with advanced processing techniques to deliver extremely low ON-resistance per silicon area. This efficiency, combined with fast switching speeds and a ruggedised device design, ensures highly reliable and efficient operation in a wide range of power management applications.

This MOSFET is housed in a SOT-223 package, optimised for surface-mount using vapour phase, infrared, or wave soldering techniques. The unique package design enables easy automatic pick-and-place assembly, similar to other SOT or SOIC packages, while offering improved thermal performance through an enlarged tab for enhanced heat sinking. A power dissipation of 1W is achievable in typical surface-mount applications.

Key features include:

• Advanced process technology for high efficiency
• Dynamic dV/dt rating for robust performance
• Fast switching for reduced switching losses
• Fully avalanche rated for ruggedness
• Low static drain-to-source ON-resistance (0.14Ω)
• Logic level compatible

Specifications:

• Channel Type: N Channel
• Drain Source Voltage (Vds): 55V
• Continuous Drain Current (Id): 2A
• Drain Source On-State Resistance: 0.14Ω
• Transistor Case Style: SOT-223
• Transistor Mounting: Surface Mount
• Test Voltage for Rds(on): 10V
• Gate Source Threshold Voltage (Max): 2V
• Power Dissipation: 1W
• Number of Pins: 4 pins
• Operating Temperature (Max): 150°C

This component is ideal for power management systems, offering a combination of low losses and high reliability.