Infineon IPW60R045CP Power MOSFET N-Channel 650V 60A TO-247

The Infineon IPW60R045CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC, as well as PWM for ATX, notebook adapters, PDP and LCD TV. This advanced MOSFET offers a significant reduction in conduction, switching, and driving losses, enabling high power density and efficiency for superior power conversion systems.

Utilising the latest state-of-the-art generation of high voltage power MOSFETs, this device makes AC-DC power supplies more efficient, compact, lighter, and cooler than ever before. Key features include the lowest Figure of Merit (Rds(on) x Qg), ultra low gate charge, extreme dv/dt rating, and very fast switching. With high current capability and a best-in-class performance ratio, this MOSFET delivers exceptional performance.

This through-hole device is housed in a TO-247 transistor case style and offers a continuous drain current of 60A, a drain-source voltage of 650V, and a low on-state resistance of 0.04 ohm. With a power dissipation of 431W and an operating temperature range up to 150°C, it is built for demanding applications.

Whether used in power supplies, lighting, or industrial systems, the IPW60R045CP ensures high efficiency and reliability. Its 3-pin design provides easy installation in standard through-hole PCB layouts.

Specifications

• Channel Type: N Channel
• Drain Source Voltage: 650V
• Continuous Drain Current: 60A
• Drain Source On-State Resistance: 0.04 ohm
• Transistor Case Style: TO-247
• Transistor Mounting: Through Hole
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 3V
• Power Dissipation: 431W
• No. of Pins: 3 pins
• Operating Temperature Max: 150°C
• Product Range: -
• MSL: MSL 3 - 168 hours
• SVHC: No SVHC (17-Jan-2023)
• Weight: 5.42 grams