Infineon IRF7313TRPBF Dual N-Channel MOSFET 30V 6.5A SOIC-8

The Infineon IRF7313TRPBF is a dual N-channel power MOSFET engineered with advanced Generation V technology. This design achieves an exceptionally low ON-resistance per silicon area, ensuring minimal power loss and maximum efficiency during operation. Its fast switching speed and ruggedised construction make it a highly reliable choice for demanding electronic circuits.

Housed in a customised SO-8 (SOIC) surface-mount package, this device benefits from an optimised lead-frame that enhances thermal performance and enables the dual-die configuration. This innovative packaging allows for superior heat dissipation and supports the integration of multiple components in a compact space, dramatically reducing the required PCB footprint for power-dense applications.

Fully avalanche-rated for robustness, this MOSFET is built to handle transient voltage spikes, increasing system reliability. Its combination of ultra-low resistance and efficient switching is ideal for managing power flow with precision and minimal energy waste.

Key Specifications

• Dual N-Channel Configuration: Two independent MOSFETs in a single package.
• Drain-Source Voltage (Vds): 30V.
• Continuous Drain Current (Id): 6.5A per channel.
• Drain-Source ON-Resistance (Rds(on)): An ultra-low 0.023 Ohm.
• Power Dissipation: 2W per channel.
• Operating Temperature Range: Up to a maximum of 150°C.
• Package Type: 8-pin SOIC (SO-8) Surface-Mount Device (SMD).

This component is a cornerstone for modern, efficient power design, offering a perfect balance of performance, size, and thermal management.