
Infineon IRFB4110PBF Power MOSFET: 100V, 180A, low Rds(on). For SMPS, UPS & high-speed switching in TO-220AB package.
The Infineon IRFB4110PBF is a high-performance N-channel HEXFET® Power MOSFET designed for demanding power switching applications. Utilizing advanced Trench MOSFET technology, it delivers an extremely low on-resistance per silicon area combined with fast switching performance, making it a cornerstone for high-efficiency designs.
This MOSFET is engineered for superior ruggedness, offering improved tolerance to gate stress, avalanche conditions, and dynamic dv/dt events. Its fully characterised capacitance and avalanche Safe Operating Area (SOA) provide designers with reliable performance boundaries. Furthermore, the enhanced body diode capabilities for dV/dt and dI/dt ensure robust operation in challenging circuits.
Key Applications
Housed in the industry-standard TO-220AB through-hole package, it ensures easy mounting and excellent thermal performance. With a maximum power dissipation of 370W and an operating temperature up to 175°C, this component is built for stability and longevity in a wide range of environments.
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