INFINEON IRFB4115PBF N-Channel Power MOSFET, TO-220AB, 150V 104A

The INFINEON IRFB4115PBF is a high-performance, single N-channel Power MOSFET utilising advanced HEXFET® technology. Designed with an extremely low on-resistance per silicon area, it delivers superior efficiency and fast switching performance, making it ideal for demanding power management applications. Its construction uses Trench MOSFET technology to optimise electrical characteristics and thermal performance.

This MOSFET is engineered for robustness, featuring improved gate, avalanche, and dynamic dv/dt ruggedness. It offers fully characterised capacitance and avalanche safe operating area (SOA), alongside enhanced body diode dV/dt and dI/dt capability. The component is also halogen-free, aligning with modern environmental standards for electronic materials.

Primary Applications

The IRFB4115PBF is perfectly suited for high-efficiency synchronous rectification in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its performance characteristics also make it an excellent choice for high-speed power switching, hard-switched circuits, and high-frequency applications where reliability and efficiency are critical.

Key Specifications

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 150 V
• Continuous Drain Current (Id): 104 A
• Drain-Source On-State Resistance (Rds(on)): 0.011 ohm (tested at 20V)
• Package / Case Style: TO-220AB
• Mounting Type: Through Hole
• Power Dissipation: 380 W
• Maximum Gate-Source Threshold Voltage: 5 V
• Number of Pins: 3
• Maximum Operating Temperature: 175°C

With its combination of high current handling, low resistance, and robust construction, the INFINEON IRFB4115PBF provides a reliable and efficient solution for advanced power electronics design.