Infineon IRFP9140NPBF Power MOSFET, P-Channel, 100V 23A, TO-247AC

The Infineon IRFP9140NPBF is a fifth-generation HEXFET® power MOSFET, engineered for high-efficiency power management and switching applications. Utilising advanced process technology, this P-channel device achieves an extremely low on-resistance of just 0.117Ω, maximising power efficiency and minimising heat generation in your designs. Its rugged construction and fast switching capabilities make it a reliable choice for demanding electronic environments.

Fully avalanche rated and featuring a dynamic dV/dt rating, this MOSFET is built to handle high-voltage transients and stressful operating conditions with confidence. It supports a high operating temperature of up to 175°C, ensuring stable performance in thermally challenging applications. The through-hole TO-247AC package is designed for robust mechanical mounting and excellent thermal dissipation, making it suitable for high-power circuits.

Key Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 23A
• Drain-Source On-State Resistance (Rds(on)): 0.117Ω
• Package / Case: TO-247AC
• Mounting Type: Through Hole
• Power Dissipation: 120W
• Gate-Source Threshold Voltage (Max): 4V
• Operating Temperature Max: 175°C
• Number of Pins: 3

With its combination of low resistance, high current handling, and rugged reliability, the IRFP9140NPBF provides designers with a highly efficient and dependable component for a wide variety of power electronics projects.