Infineon N Channel Power MOSFET 100V 39A 0.036 ohm TO-247AC

The Infineon N Channel Power MOSFET is a high-performance semiconductor device designed for efficient power management and switching applications. Featuring a robust N Channel configuration, this transistor offers a drain source voltage (Vds) of 100V and a continuous drain current (Id) of 39A, making it suitable for demanding electronic circuits.

With a low drain source on-state resistance of just 0.036 ohm, tested at 10V, this MOSFET ensures minimal power loss and enhanced operational efficiency. The gate source threshold voltage reaches a maximum of 2V, while the device can handle a power dissipation of up to 140W. It operates reliably in high-temperature environments, supporting a maximum operating temperature of 175°C.

Housed in a durable TO-247AC case style, this through-hole mounting component features 3 pins for secure and stable integration onto printed circuit boards. Its compact physical dimensions—43 mm in height, 33 mm in width, and 15 mm in depth—coupled with a lightweight design of just 6 grams, facilitate straightforward installation in space-constrained assemblies.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 39A
• Drain Source On-State Resistance: 0.036 ohm
• Power Dissipation: 140W
• Transistor Case Style: TO-247AC
• Transistor Mounting: Through Hole
• Maximum Operating Temperature: 175°C