Infineon N Channel Power MOSFET 150V 171A TO-247AC
Infineon 150V N Channel HEXFET Power MOSFET, 171A, 5900µohm, TO-247AC. Ideal for SMPS, UPS & high speed switching.
The Infineon N Channel Power MOSFET utilises advanced Trench MOSFET technology to deliver low on-resistance per silicon area and fast switching performance. Designed as a single N-channel HEXFET® power transistor, it is engineered for robust and efficient operation in demanding electronic circuits.
This component features improved gate, avalanche, and dynamic dv/dt ruggedness, ensuring reliability under stressful conditions. It also boasts fully characterised capacitance and avalanche Safe Operating Area (SOA), alongside enhanced body diode dV/dt and dI/dt capability. With a maximum drain-source voltage of 150 V and a continuous drain current of 171 A, it provides substantial power handling for critical systems.
Key Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 150 V
- Continuous Drain Current (Id): 171 A
- On-State Resistance: 5900 µohm
- Power Dissipation: 517 W
- Mounting: Through Hole
- Case Style: TO-247AC
The through-hole mounting and TO-247AC case style facilitate straightforward integration into circuit boards. Measuring 43 mm in height, 33 mm in width, and 15 mm in depth, with a weight of just 6 grams, this MOSFET is suitable for compact yet high-power designs. It operates reliably at temperatures up to 175°C.
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