Infineon N-Channel Power MOSFET 150V 37A 0.042 Ohm TO-220AB

This fifth-generation single N-channel power MOSFET from Infineon utilises advanced processing techniques to achieve extremely low ON-resistance per silicon area. This crucial benefit, combined with exceptionally fast switching speeds and a ruggedised device design, ensures highly efficient and reliable operation for a wide variety of demanding electronic circuits.

Housed in the universally preferred TO-220AB through-hole mounting package, this component is perfectly suited for commercial and industrial applications requiring power dissipation levels up to approximately 50W. The device boasts advanced process technology alongside a dynamic dV/dt rating and a fully avalanche rating, ensuring robust and stable performance even under strenuous electrical conditions.

Key Specifications

• Channel Type: N-Channel
• Drain Source Voltage (Vds): 150V
• Continuous Drain Current (Id): 37A
• Drain Source On-State Resistance: 0.042 Ohm
• Power Dissipation: 150W
• Gate Source Threshold Voltage Max: 4V
• Rds(on) Test Voltage: 10V
• Number of Pins: 3
• Operating Temperature Max: 175°C
• Dimensions: 43 mm x 33 mm x 15 mm
• Weight: 2 grams

Delivering an optimal combination of remarkably low resistance and high-speed switching, this power MOSFET is a highly dependable choice for advanced power management and industrial systems. Its robust construction and advanced technical specifications make it an essential component for any serious electronics project.