Infineon N-Channel Power MOSFET, 200V, 9.3A, 0.3 Ohm, TO-220AB
Infineon N-Channel Power MOSFET, 200V, 9.3A with low on-resistance. Fully avalanche rated, through-hole TO-220AB for power management.
The Infineon N-Channel Power MOSFET utilises advanced planar technology to deliver extremely low on-resistance per silicon area and fast switching performance. Designed for high-efficiency power management applications, this HEXFET® device ensures reliable operation even in demanding conditions.
This robust MOSFET is fully avalanche rated and features a dynamic dV/dt rating, providing excellent resilience against voltage spikes. With a maximum operating temperature of 175°C, it is well-suited for high-stress environments. The component is easy to parallel and has simple drive requirements, making it highly versatile for various circuit designs.
Key Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 200V
- Continuous Drain Current (Id): 9.3A
- Drain Source On State Resistance: 0.3 ohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 82W
- Case Style: TO-220AB
- Mounting Type: Through Hole
- Number of Pins: 3
Featuring a compact form factor with dimensions of 43 mm x 33 mm x 15 mm and a lightweight design of just 2 grams, this through-hole MOSFET is straightforward to integrate into your PCB layouts, offering both space efficiency and high-performance power management.
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