Infineon N Channel Power MOSFET 800 V 17 A 0.29 ohm TO-220 Through Hole

The Infineon CoolMOS™ N-channel Power MOSFET is an 800 V transistor featuring ultra-low gate current, specifically designed for high DC bulk voltage and switching applications. This advanced component utilises high voltage technology to deliver high efficiency and power density for demanding circuit designs.

Key Features

• Extreme dV/dt rated
• High peak current capability
• Qualified according to JEDEC for target applications
• Improved transconductance
• Periodic avalanche rated
• Low specific ON-state resistance
• Very low energy storage in output capacitance (Eoss) at 400 V
• Field proven CoolMOS™ quality
• High reliability and ease of use

Engineered for robust performance, this through-hole mounted MOSFET comes in a TO-220 case style with 3 pins. It supports a continuous drain current of 17 A and offers a drain source on-state resistance of 0.29 ohm. The transistor operates efficiently with a maximum power dissipation of 227 W and can withstand temperatures up to 150°C. The compact dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth, alongside a lightweight design of just 2.008 grams, make it highly suitable for space-constrained installations.

Whether you are working on industrial systems, communications networking, consumer electronics, or power management solutions, this N-channel MOSFET provides the reliable operation required for modern electronic applications.