
Infineon P-Channel Power MOSFET, 55V, 11A, 0.175 ohm. Ideal for automotive & power management. Surface mount TO-252AA.
This Infineon P-Channel Power MOSFET utilises advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit, combined with fast switching speed and a ruggedised device design, provides an extremely efficient and reliable operation for your electronic circuits.
Designed specifically for surface-mounting, this component is compatible with vapour phase, infrared, or wave soldering techniques. It boasts a power dissipation level of up to 1.5W in typical surface-mount applications, making it highly versatile for densely populated circuit boards.
Key Features
Featuring a TO-252AA case style, this MOSFET operates with a continuous drain current of 11A and a drain source voltage of 55V. It ensures stable performance with a maximum operating temperature of 150°C and a gate source threshold voltage of 4V. The low ON-resistance of 0.175 ohm guarantees efficient power management and minimal energy loss, making it an excellent choice for demanding applications. Engineered for robust performance, this P-channel MOSFET delivers reliable switching capabilities.
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