Infineon SPW17N80C3 Power MOSFET, N-Channel, 800V, 17A, 0.29 Ohm, TO-247

The Infineon SPW17N80C3 is a high-performance N-channel Cool MOS™ power transistor engineered for demanding industrial applications. It utilises a revolutionary high-voltage technology to deliver exceptional efficiency and reliability. A key feature is its ultra-low gate charge, which enables faster switching speeds and reduces driving losses, making it ideal for high-frequency power conversion circuits.

This MOSFET is designed to withstand extreme conditions, being both extreme dv/dt rated and periodic avalanche rated. This ensures robust operation in environments with high voltage transients and stress, providing enhanced system durability. The component is housed in a robust TO-247 through-hole package, offering excellent thermal performance for heat dissipation up to a maximum power rating of 208W.

With a high drain-source voltage (Vds) of 800V and a continuous drain current (Id) of 17A, it is suited for high-power switching tasks. The low on-state resistance (Rds(on)) of just 0.29 ohm at a 10V gate drive minimises conduction losses, improving overall energy efficiency. Its wide operating temperature range, up to a maximum of 150°C, ensures stable performance in challenging thermal environments.

The device supports a gate-source voltage of ±20V and features a maximum gate-source threshold voltage of 3V, providing design flexibility for various drive circuits. Its construction allows for a soldering temperature of up to 260°C, facilitating reliable PCB assembly. This combination of advanced technology, high power handling, and rugged design makes the SPW17N80C3 a superior choice for power supply units, motor drives, and industrial inverters where efficiency and reliability are paramount.