IXYS HiPerFET MOSFET N Channel 150A 150V 0.011ohm MiniBLOC

The IXYS HiPerFET™ Power MOSFET (model IXFN180N15P) is a 150V N-channel enhancement mode device engineered for high-performance power switching. It features a fast intrinsic diode and is designed for both hard switching and resonant mode applications, delivering excellent ruggedness and reliability.

This MOSFET offers low gate charge, ensuring efficient and fast switching, while the unclamped inductive switching (UIS) rating provides robustness in demanding environments. The low inductance package simplifies driving and protection, and the high power density allows for compact, space-saving designs.

The device is encapsulated in epoxy meeting UL94V-0 flammability standards and incorporates aluminium nitride isolation for superior thermal management. The fast recovery diode minimises switching losses, making it suitable for high-frequency circuits.

With a continuous drain current of 150A and a drain-source voltage of 150V, this MOSFET handles substantial power. Its low on-state resistance of 0.011Ω (tested at 10V) reduces conduction losses, enhancing overall efficiency.

Applications

• Industrial power supplies
• DC-DC converters
• Motor drives
• Inverters
• Battery management systems

Specifications

• Channel Type: N Channel
• Continuous Drain Current (Id): 150A
• Drain-Source Voltage (Vds): 150V
• On-State Resistance (Rds(on)): 0.011Ω (at 10V)
• Gate-Source Threshold Voltage (Max): 5V
• Power Dissipation: 680W
• Operating Temperature (Max): 175°C
• Package: MiniBLOC with aluminium nitride isolation
• Isolation: Aluminium nitride
• Flammability Rating: UL94V-0
• Diode: Fast recovery
• Special Feature: UIS rated, low inductance
• Dimensions (H x W x D): 43mm x 33mm x 15mm
• Weight: 30g