Microchip P Channel Power MOSFET, 16.5V, 500mA, 1.3 Ohm, TO-92

The Microchip P Channel Power MOSFET is an enhancement-mode (normally-off) transistor that utilises a lateral MOS structure alongside a well-proven silicon-gate manufacturing process. This combination produces a device offering the power handling capabilities of a bipolar transistor, coupled with the high input impedance and negative temperature coefficient inherent in MOS devices.

This component is engineered for reliable performance, featuring ultra-low threshold voltage, high input impedance, and low input capacitance. It delivers fast switching speeds and low on-resistance, while offering freedom from secondary breakdown and low input and output leakage. These characteristics make it highly effective for sensitive and demanding electronic applications.

Key Specifications

• Channel Type: P Channel
• Drain Source Voltage (Vds): 16.5V
• Continuous Drain Current (Id): 500mA
• Drain Source On State Resistance: 1.5 Ohm
• Transistor Case Style: TO-92
• Mounting: Through Hole
• Power Dissipation: 1W
• Number of Pins: 3
• Gate Source Threshold Voltage Max: 700mV
• Rds(on) Test Voltage: 5V
• Operating Temperature Max: 150°C
• Dimensions: 43 mm x 33 mm x 15 mm
• Weight: 0.2 grams