NEXPERIA BSH108,215 Power MOSFET N Channel 30V SOT-23

The NEXPERIA BSH108,215 is an N-channel enhancement-mode field-effect transistor (FET) housed in a subminiature SOT-23 surface-mount package. This component utilises advanced TrenchMOS™ technology to deliver excellent performance in a compact form factor.

Designed for efficiency, this MOSFET offers very fast switching speeds and is logic level compatible, making it easy to drive from low-voltage control signals. The device is engineered for a wide range of low-power applications, including battery management systems, high-speed switching circuits, and low-power DC-to-DC converters.

Key Features

_ N-channel enhancement-mode MOSFET _ TrenchMOS™ technology _ Very fast switching speed _ Logic level compatible _ Subminiature SOT-23 surface-mount package _ Wide operating junction temperature range from -65°C to 150°C

Technical Specifications

_ Channel Type: N Channel _ Drain Source Voltage (Vds): 30V _ Continuous Drain Current (Id): 1.9A _ Drain Source On-State Resistance: 0.12ohm _ Rds(on) Test Voltage: 10V _ Gate Source Threshold Voltage (Max): 1.5V _ Power Dissipation: 830mW _ No. of Pins: 3 _ Operating Temperature Max: 150°C

The BSH108,215 is suitable for use in power management applications and industrial settings where reliable, high-speed switching is required.