NEXPERIA Dual N-Channel MOSFET 60V 320mA 0.9 Ohm SOT-363 SMD

The NEXPERIA Dual N-Channel MOSFET is an enhancement-mode field-effect transistor housed in a compact surface-mount plastic package. Utilising advanced Trench MOSFET technology, this component delivers efficient and reliable performance for a wide variety of electronic circuits.

Key features of this dual MOSFET include logic-level compatibility and very fast switching capabilities. These characteristics make it highly effective for applications requiring rapid response times and low-voltage drive signals. The SOT-363 case style ensures a small footprint, which is ideal for densely populated printed circuit boards where space is at a premium.

Technical Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 320mA
• Drain Source On-State Resistance (Rds on): 0.9 ohm
• Power Dissipation: 420mW
• Operating Temperature Max: 150°C
• Qualification: AEC-Q101
• Case Style: SOT-363
• Number of Pins: 6

With a product weight of just 0.005 grams and dimensions of 43mm x 33mm x 15mm, this MOSFET is perfectly suited for modern, lightweight electronic assemblies requiring dependable power management and switching performance.