ON Semiconductor DTC114EET1G NPN Digital Transistor, 100mA, 50V, SOT-416

The DTC114EET1G from ON Semiconductor is a robust NPN digital transistor featuring a monolithic bias resistor network. This integrated design combines a single transistor with two internal resistors, streamlining your circuit layout by eliminating the need for separate external components.

Designed for efficient and compact electronics, this BRT (Bias Resistor Transistor) simplifies circuit design, reduces board space, and lowers overall component count, making it a reliable choice for modern electronic assemblies.

Key Features & Benefits

• Integrated Bias Network: Combined series base resistor (R1) and base-emitter resistor (R2) save PCB space and reduce assembly time.
• High Voltage Capability: With a collector-emitter voltage rating of 50V, it suits a wide range of switching applications.
• SOT-416 Package: Surface-mount (SMD) package ideal for automated assembly and space-constrained designs.
• Power Dissipation: Handles up to 300mW for steady performance in demanding conditions.

Typical Applications

This digital transistor is well-suited for industrial control, automotive electronics, and power management circuits, providing dependable switching performance wherever compactness and reliability are required.

Specifications:

• Polarity: NPN
• Collector-Emitter Voltage (Max): 50V DC
• Continuous Collector Current: 100mA
• Base Input Resistor (R1): 10 kΩ
• Base-Emitter Resistor (R2): 10 kΩ
• DC Current Gain (hFE): 35 min
• Power Dissipation: 300mW
• Case Style: SOT-416 (SC-90)
• No. of Pins: 3
• Mounting Type: Surface Mount
• Operating Temperature (Max): +150°C