ONSEMI 1N5819G General Purpose Schottky Rectifier, 1A, 40V, DO-41

The ONSEMI 1N5819G is a high-performance, axial-leaded Schottky Barrier Rectifier designed for efficient power conversion. Its epoxy-moulded case offers excellent corrosion resistance across all external surfaces, and the terminal leads feature a readily solderable finish for reliable and straightforward PCB mounting. This device utilises the Schottky barrier principle in a large-area metal-to-silicon power diode, delivering superior switching performance.

Constructed with state-of-the-art geometry, it incorporates a chrome barrier metal, epitaxial construction with oxide passivation, and metal overlap contact. This makes it ideally suited for use as a rectifier in low-voltage, high-frequency inverter circuits and as a freewheeling diode, where its fast switching characteristics are critical.

Key Benefits

• Extremely low forward voltage minimises conduction losses, improving overall system efficiency.
• Low stored charge and majority carrier conduction enables very fast switching speeds, reducing switching losses in high-frequency applications.
• Low power loss and high efficiency contribute to cooler running and more energy-effective designs.
• The cathode is clearly indicated by a polarity band for easy and error-free circuit orientation.

Applications

This rectifier is an excellent choice for a wide range of Power Management and Safety applications. Its robust electrical characteristics and through-hole mounting make it a reliable component in power supplies, DC-DC converters, reverse polarity protection circuits, and other electronic systems where efficient rectification is required.