ONSEMI 2N6284G NPN Darlington Power Transistor, 100V, 20A, 160W, TO-3

The ONSEMI 2N6284G is a robust NPN Darlington bipolar power transistor engineered for demanding general-purpose amplification and low-frequency switching tasks. Its monolithic construction incorporates built-in base-emitter shunt resistors, simplifying circuit design and enhancing reliability. This transistor is distinguished by its high DC current gain and excellent power handling capabilities, making it a dependable component in a variety of electronic applications.

With a substantial collector-emitter voltage rating of 100V and a continuous collector current capacity of 20A, it is built to manage significant power levels. The device features a low junction-to-case thermal resistance of 1.09°C/W, which promotes efficient heat dissipation from the silicon die to the metal case, crucial for maintaining performance and longevity in high-power scenarios. The robust TO-3 metal package is designed for through-hole mounting, offering mechanical strength and superior thermal conductivity for effective heat sinking.

Key Features & Specifications

• Transistor Type: NPN Darlington Bipolar Junction Transistor (BJT)
• Construction: Monolithic with integrated base-emitter shunt resistors
• Collector-Emitter Voltage (V_BRCEO): 100V
• Continuous Collector Current (I_C): 20A
• Power Dissipation (P_D): 160W
• DC Current Gain (h_FE): 100 (typical)
• Thermal Resistance (Junction-to-Case): 1.09°C/W
• Package / Case: TO-3 (2-pin)
• Mounting Style: Through Hole
• Maximum Operating Temperature: 200°C

Designed for performance and durability, the ONSEMI 2N6284G is an ideal choice for audio power amplifiers, industrial motor controls, power supply regulators, and other low-frequency switching circuits where high current gain and reliable power management are essential.