ONSEMI FDC658AP P-Channel MOSFET, 30V 4A, 0.05 ohm, SuperSOT

The ONSEMI FDC658AP is a high-performance, logic-level, single P-channel MOSFET engineered using the advanced PowerTrench® process. This technology has been specifically optimised for demanding applications in modern electronics, delivering superior efficiency and reliability in power management circuits.

Designed for critical roles in battery-powered systems, this MOSFET offers an extremely low drain-source on-state resistance (RDS(ON)) of just 0.05 ohm. This key specification minimises power loss and heat generation, which is essential for maximising battery life and improving overall system efficiency. Its low gate charge further enhances switching performance, making it ideal for high-frequency operation.

Primary Applications

This component is a perfect solution for a variety of power management tasks. Its primary uses include:

• Battery Power Management: Efficiently controlling power distribution and load switching in portable devices.
• Load Switching: Providing a robust and low-loss switch for connecting and disconnecting loads from a power source.
• DC-to-DC Conversion: Serving as a key element in switch-mode power supplies and voltage regulators where high efficiency is paramount.

The device is supplied in a compact SuperSOT surface-mount package, facilitating automated assembly and saving valuable board space in densely packed electronic designs. With a high maximum operating temperature of 150°C and a power dissipation rating of 1.6W, it is built to perform reliably in challenging thermal environments.

Key Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 30 V
• Continuous Drain Current (Id): 4 A
• Drain-Source On-State Resistance (RDS(ON)): 0.05 ohm
• Package / Case Style: SuperSOT (6-pin)
• Mounting Type: Surface Mount
• **Gate-Source Threshold Volage