ONSEMI FDD8424H Dual N & P Channel MOSFET, TO-252, 40V, 9A

The ONSEMI FDD8424H is a 40V dual N-channel and P-channel PowerTrench® MOSFET, engineered to minimise on-state resistance and maintain low gate charge for superior switching performance. This medium voltage power MOSFET is optimised for power switches, combining a small gate charge (QG), small reverse recovery charge (Qrr), and a soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies.

Utilising a shielded-gate structure that provides charge balance, this advanced technology results in a figure of merit (FOM, QG x RDS(ON)) that is 66% lower than previous generations. The soft body diode performance of this PowerTrench® MOSFET helps eliminate the need for snubber circuits or higher voltage rating MOSFETs, by minimising undesirable voltage spikes in synchronous rectification.

This general-purpose product is suitable for many different applications, delivering reliable and efficient operation. The device is housed in a TO-252 (DPAK) package with 5 pins, offering a compact solution for your power management needs.

Key Features:

• Complementary N and P channel configuration
• Drain source voltage (N & P channel): 40V
• Continuous drain current (N & P channel): 9A
• Low on-state resistance (N & P channel): 0.019 ohm
• Fast switching for synchronous rectification
• Small gate charge and soft body diode
• Shielded-gate structure for charge balance

Specifications:

• Channel Type: Complementary N and P Channel
• Drain Source Voltage Vds (N Channel): 40V
• Drain Source Voltage Vds (P Channel): 40V
• Continuous Drain Current Id (N Channel): 9A
• Continuous Drain Current Id (P Channel): 9A
• Drain Source On-State Resistance (N Channel): 0.019 ohm
• Drain Source On-State Resistance (P Channel): 0.019 ohm
• Transistor Case Style: TO-252 (DPAK)<