ONSEMI FDN339AN Power MOSFET, N Channel, 20V, 3A, SOT-23

The ONSEMI FDN339AN is a 20V N-channel PowerTrench® MOSFET engineered to deliver superior switching performance in a compact SOT-23 package. Specifically designed with a 2.5V gate specification, it achieves an exceptionally low on-state resistance (RDS(on)) of just 0.035 ohm while maintaining minimal gate charge. This optimal balance is key for high-efficiency power conversion.

Utilising the latest shielded-gate PowerTrench technology, this component provides excellent charge balance. The advanced design results in a figure of merit (FOM) that is 66% lower than previous generations, translating directly into reduced switching losses and higher overall system efficiency. Its soft recovery body diode performance is a standout feature, helping to minimise voltage spikes in synchronous rectification circuits and potentially eliminating the need for additional snubber circuits.

This MOSFET is a high-performance switch suitable for a broad range of general-purpose applications. It offers robust power and current handling capability within its ratings, making it a reliable choice for designers seeking to optimise their power supply designs.

Key Features & Specifications

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 20 V
• Continuous Drain Current (Id): 3 A
• Drain-Source On-State Resistance (RDS(on)): 0.035 ohm @ Vgs=4.5V
• Gate-Source Threshold Voltage: 1.5 V max
• Package / Case: SOT-23 (Surface Mount)
• Power Dissipation: 500 mW
• Operating Temperature: Up to 150°C
• Technology: Advanced PowerTrench® with shielded-gate structure
• Special Feature: Soft recovery body diode for reduced EMI
• Special Feature: Low gate charge for fast switching