ONSEMI FDPF55N06 N-Channel Power MOSFET, 60V, 55A, TO-220F

The ONSEMI FDPF55N06 is a high-performance N-Channel Power MOSFET engineered to deliver superior efficiency in power switching applications. It is specifically designed to minimise in-state resistance (Rds(on)), resulting in reduced power loss and heat generation, which enhances overall system reliability and longevity. This component offers excellent switching performance and high avalanche energy strength, making it a robust choice for demanding electronic circuits.

Part of the UniFET product family, this MOSFET is ideally suited for a wide range of power converter designs. Its key specifications include a drain-source voltage (Vds) rating of 60 volts and a continuous drain current (Id) capability of 55 amps, providing ample headroom for high-current applications. The low drain-source on-state resistance of just 0.018 ohms ensures minimal voltage drop and maximum power efficiency when the device is fully switched on.

Housed in a industry-standard TO-220F through-hole package, it facilitates easy mounting and efficient heat dissipation via an external heatsink, supporting a maximum power dissipation of 48 watts. The device operates reliably across a wide temperature range, with a maximum junction temperature of 150°C. It is supplied with a moisture sensitivity level (MSL) of 1, meaning it is suitable for indefinite storage without special dry packing requirements.

Key Applications

This MOSFET is tailored for use in advanced switching power supplies and converters. It is an excellent component for:

• Power Factor Correction (PFC) circuits
• Flat Panel Display (FPD) television power supplies
• ATX computer power supplies
• Electronic lamp ballasts

With its combination of high current handling, low resistance, and robust switching characteristics, the FDPF55N06 from ONSEMI is a dependable foundation for building efficient, stable, and powerful electronic systems.