ONSEMI FQP27P06 P-Channel Power MOSFET, -60V 27A, TO-220

The ONSEMI FQP27P06 is a robust P-channel power MOSFET housed in a standard TO-220 through-hole package. Engineered with advanced planar stripe and DMOS technology, this device is optimised to deliver exceptionally low on-state resistance, ensuring superior switching performance and high avalanche energy strength for demanding power management tasks.

It is ideally suited for a wide range of professional and industrial applications, providing reliable, efficient power switching. Key performance characteristics include a low reverse transfer capacitance of just 120pF and a low gate charge of 33nC, contributing to fast switching speeds and reduced driving losses in high-frequency circuits.

Key Features & Performance

• High Power Handling: Capable of a continuous drain current (Id) of -27A and a power dissipation (Pd) of 120W.
• Low On-State Resistance: Features a very low Rds(on) of just 55mohm at Vgs -10V, minimising conduction losses and improving overall efficiency.
• Robust Voltage Ratings: Rated for a drain-to-source voltage (Vds) of -60V and a gate-to-source voltage of ±25V, offering a wide safety margin.
• Extended Temperature Range: Operates reliably across a broad temperature spectrum from -55°C to 175°C.
• Superior Switching: The tailored DMOS technology provides excellent switching performance, which is critical for modern power supply designs.

Primary Applications

This versatile MOSFET is a perfect component choice for switched-mode power supplies (SMPS), audio amplifier output stages, DC motor control circuits, and variable switching power applications where efficiency and thermal performance are paramount.