
ONSEMI J175 P-channel JFET for analogue switching, 30V breakdown, TO-92 case. Ideal for sample-hold circuits & industrial use.
The ONSEMI J175_D26Z is a P-channel junction field-effect transistor (JFET) engineered for precise, low-level signal control. Designed using process 88, it excels in applications requiring high-impedance switching and minimal signal interference, making it a reliable choice for sensitive analogue circuitry.
This JFET is characterised by a maximum gate-source breakdown voltage of 30V, ensuring robust operation within its specified range. It features a zero-gate-voltage drain current (Idss) with a minimum of -7mA and a maximum of -60mA, providing a consistent current handling capability. The gate-source cutoff voltage is specified at a maximum of 6V, allowing for effective channel control with relatively low input voltages.
Key Features & Applications
With its three-pin configuration and P-channel operation, the J175 offers designers a straightforward and effective solution for managing signal paths in critical circuits. Its combination of electrical specifications and physical robustness makes it a staple component for electronic design engineers.
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