ONSEMI N Channel Power MOSFET 50V 210mA SOT-323 SMD

This ONSEMI N-channel enhancement-mode Power MOSFET is designed to minimise on-state resistance while delivering fast switching performance. It is specifically engineered for low-voltage and low-current applications, making it an excellent choice for power MOSFET gate drivers and various other general switching tasks.

Featuring a high-density cell design, this component achieves extremely low RDS(on), which ensures highly efficient operation with minimal power loss. The surface-mount SOT-323 package is compact, making it perfectly suited for space-constrained circuit board designs and modern electronics assembly.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 50V
• Continuous Drain Current (Id): 210mA
• Drain Source On-State Resistance: 3.5 Ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 1.3V
• Power Dissipation: 340mW
• Number of Pins: 3
• Maximum Operating Temperature: 150°C

With a weight of 1.021 grams and dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth, this MOSFET is optimised for efficient integration into your electronic projects.