ONSEMI NPN Bipolar Junction Transistor SMD SOT-89, 50V 7A

The ONSEMI NPN Bipolar Junction Transistor is a high-performance surface-mount device (SMD) designed for demanding switching and amplification circuits. Featuring a robust SOT-89 package, it offers excellent power handling in a compact form factor, making it ideal for space-constrained PCB designs.

This transistor delivers a high collector-emitter voltage (V_CE) of 50V and can handle a continuous collector current of 7A, with a power dissipation rating of 3.5W. Its high transition frequency of 330MHz ensures it performs reliably in high-speed applications, while a minimum DC current gain (h_FE) of 200 provides substantial signal amplification. The device operates within a wide temperature range, with a maximum junction temperature of 150°C, ensuring stability under various environmental conditions.

Key Specifications & Features

• Polarity: NPN Bipolar Junction Transistor (BJT)
• Package: SOT-89, Surface Mount Device (SMD)
• Maximum Collector-Emitter Voltage (V_CEO): 50V
• Continuous Collector Current (I_C): 7A
• Power Dissipation (P_D): 3.5W
• Transition Frequency (f_T): 330MHz
• DC Current Gain (h_FE): Min. 200
• Maximum Operating Temperature: 150°C
• Pin Count: 3 pins

With its combination of high current capacity, voltage rating, and gain, this ONSEMI transistor is a reliable choice for power management, motor control, audio amplification, and other general-purpose electronic applications where efficiency and durability are paramount.