ONSEMI NPN Bipolar Transistor 500V 5A 40W TO-220F

The ONSEMI Bipolar (BJT) Single Transistor is an NPN silicon device engineered for high voltage operations and exceptional reliability. Designed with a wide Safe Operating Area (SOA), this transistor ensures stable performance under demanding conditions, making it a dependable choice for various electronic circuits.

Featuring high-speed switching capabilities, it is well-suited for applications requiring rapid transitions and efficient power management. The transistor supports a maximum collector-emitter voltage of 500V and a continuous collector current of 5A, with a total power dissipation of 40W. It boasts a transition frequency of 15MHz and a minimum DC current gain (hFE) of 20, providing consistent amplification and switching characteristics.

Housed in a robust TO-220F case style, this through-hole mounting component features 3 pins for straightforward installation. It operates reliably at temperatures up to 150°C. With compact dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth, and a weight of 105.687 grams, it integrates easily into standard circuit board layouts.

Key Specifications

• Transistor Polarity: NPN
• Collector Emitter Voltage Max: 500V
• Continuous Collector Current: 5A
• Power Dissipation: 40W
• Transition Frequency: 15MHz
• DC Current Gain hFE Min: 20
• Transistor Case Style: TO-220F
• Mounting Type: Through Hole
• Number of Pins: 3
• Operating Temperature Max: 150°C

This ONSEMI transistor delivers the robustness and speed required for advanced electronic designs.