NTA4153NT1G Power MOSFET N Channel 20V 915mA SC-75

The NTA4153NT1G from ONSEMI is a high-performance N-channel Small Signal MOSFET featuring an ESD-protected gate, ensuring robust operation in sensitive electronic environments. This component is engineered for efficient load and power switching applications, making it an ideal choice for power supply converter circuits, battery management systems, and a variety of portable devices including cell phones, PDAs, digital cameras, and pagers.

With a low on-state resistance (RDS(on)) of just 0.127 ohm, this MOSFET significantly improves system efficiency, reducing power losses and heat generation. It is rated for a low threshold voltage of 1.5V, allowing for easy drive from low-voltage logic circuits. The device supports a continuous drain current of 915mA and a drain-source voltage of 20V, delivering reliable performance across a wide range of applications. It operates over a junction temperature range of -55°C to 150°C, ensuring stability in extreme conditions.

The MOSFET comes in a compact SC-75 surface-mount package, ideal for space-constrained PCB designs. It features three pins and offers a maximum power dissipation of 300mW. The device is qualified for use in power management, consumer electronics, computer peripherals, and industrial applications. Its ESD protection adds an extra layer of durability, making it a dependable choice for your circuit designs.

Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 20V
• Continuous Drain Current (Id): 915mA
• Drain Source On-State Resistance: 0.127 ohm
• Gate Source Threshold Voltage (Max): 760mV
• Rds(on) Test Voltage: 4.5V
• Power Dissipation: 300mW
• Transistor Case Style: SC-75
• Transistor Mounting: Surface Mount
• No. of Pins: 3 Pins
• Operating Junction Temperature Range: -55°C to 150°C
• ESD Protected Gate: Yes