ONSEMI P-Channel Power MOSFET, 60V 15.5A, TO-252 (DPAK)

The ONSEMI NTD20P06LT4G is a high-performance, P-channel power MOSFET engineered for demanding electronic applications. With a drain-source voltage (Vds) of -60V and a continuous drain current (Id) of 15.5A, it offers robust power handling in a compact surface-mount package. This component is specifically designed for bridge circuits, power supplies, motor control systems, and DC-DC converters, providing efficient switching and reliable operation.

A key feature of this MOSFET is its low on-state resistance (Rds(on)) of just 0.15ohm at a 5V test voltage, which minimises power loss and heat generation during operation. The device is built to withstand high energy in both avalanche and commutation modes, enhancing its durability and performance in rugged environments. Its low gate charge facilitates fast switching speeds, making it ideal for high-frequency applications.

Quality and Reliability

This component is AEC-Q101 qualified, meeting the stringent reliability standards required for automotive and other high-stress applications. It is housed in a TO-252 (DPAK) case, a popular surface-mount package known for its good thermal performance and ease of assembly on printed circuit boards (PCBs).

Specifications at a Glance

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 15.5A
• Drain-Source On-State Resistance (Rds(on)): 0.15ohm
• Gate-Source Threshold Voltage (Max): 1.5V
• Power Dissipation: 65W
• Maximum Operating Temperature: 175°C
• Package Type: TO-252 (DPAK)
• Mounting Style: Surface Mount

With its combination of high current capacity, low resistance, and proven reliability, the ONSEMI NTD20P06LT4G is an excellent choice for engineers designing efficient power management and motor drive systems.