ONSEMI P Channel Power MOSFET, 60V, 2.6A, 0.17 Ohm, SOT-223

The ONSEMI P Channel Power MOSFET is a reliable and efficient surface-mount device designed for a variety of power management applications. Built in a compact SOT-223 package, this transistor offers excellent performance with a drain-to-source voltage of 60V and a continuous drain current of 2.6A, making it suitable for demanding circuit designs.

Featuring a drain-source on-state resistance of 0.17 ohm, this power MOSFET ensures minimal power loss and heat generation during operation. The device also provides a fast turn-on delay time of 11ns, enabling responsive and efficient switching for high-performance electronics. It is specifically engineered for applications that require precise power switching and control. The robust design supports an operating junction temperature range from -55°C to 175°C, ensuring stability under demanding environmental conditions.

Key Applications

• Power supplies
• PWM motor control
• Converters
• Power management systems

With its surface-mount configuration and 4-pin design, this P-channel MOSFET provides a practical solution for modern, space-constrained electronic assemblies. It delivers a maximum power dissipation of 1W and a gate-source threshold voltage of up to 4V, facilitating reliable operation for your electronic projects.