ONSEMI PNP BJT Transistor, -50V, -50mA, 225mW, SOT-23 SMD

The ONSEMI PNP Bipolar Transistor is designed for general-purpose amplifier applications requiring low noise. Housed in a SOT-23 package, this surface-mount device is specifically engineered for lower power applications, helping to save valuable board space.

Featuring low RDS(ON), the transistor provides improved efficiency and helps extend battery life, making it an excellent choice for portable and power-sensitive designs. It boasts a maximum collector-emitter voltage of 50V and a continuous collector current of 50mA, with a total power dissipation of 225mW. The component operates reliably up to a maximum temperature of 150°C and is qualified to the AEC-Q101 standard, ensuring robustness for demanding environments.

With a transition frequency of 40MHz and a minimum DC current gain (hFE) of 40, this transistor delivers consistent performance. The compact dimensions of 43mm x 33mm x 15mm and a weight of 80 grams make it suitable for automated manufacturing processes.

Key Features

• Transistor Polarity: PNP
• Maximum Collector Emitter Voltage: 50V
• Continuous Collector Current: 50mA
• Power Dissipation: 225mW
• Transition Frequency: 40MHz
• DC Current Gain (hFE Min): 40
• Mounting: Surface Mount
• Case Style: SOT-23
• Pins: 3
• Qualification: AEC-Q101