Power MOSFET N Channel 100V 46A TO-220AB

The IRF3710PBF from Infineon is a single N-channel Advanced HEXFET® Power MOSFET designed for high-efficiency power management. Utilising advanced processing techniques, this device delivers ultra-low on-resistance per silicon area, enabling reduced conduction losses and improved thermal performance.

Engineered for fast switching and rugged operation, this MOSFET features a dynamic dV/dt rating and is fully avalanche rated, ensuring reliable performance in demanding environments. With an operating temperature range up to 175°C, it is suitable for applications requiring high reliability under thermal stress.

Key Features

• Advanced process technology for exceptional efficiency
• Ultra-low on-resistance of 0.023 ohm
• Dynamic dV/dt rating for enhanced robustness
• Fully avalanche rated for high-energy pulse handling
• Operating temperature up to 175°C

Technical Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 46A
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 4V
• Power Dissipation: 150W
• Transistor Case Style: TO-220AB
• Mounting Type: Through Hole
• Number of Pins: 3
• Dimensions: Height 43mm, Width 33mm, Depth 15mm
• Weight: 2g

This power MOSFET is an efficient and reliable solution for a wide range of power conversion and switching applications, delivering consistent performance in a compact and industry-standard package.