Power MOSFET N Channel 200V 10A TO-220

This Power MOSFET from STMicroelectronics is an N-channel enhancement-mode transistor designed for high-efficiency power switching applications. With a drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 10A, it delivers robust performance for a range of power conversion tasks.

The device features a low drain-source on-state resistance of 0.4Ω (tested at Vgs = 10V), which minimises conduction losses and improves thermal efficiency. It is housed in a TO-220 package, a widely adopted industry standard for through-hole mounting, ensuring easy integration into PCB designs and excellent heat dissipation.

With a maximum power dissipation of 100W and an operating temperature range up to 150°C, this MOSFET is suitable for demanding environments where reliability is critical. The gate-source threshold voltage is 3V (max), making it compatible with standard logic-level drive circuits.

This through-hole component offers stable thermal performance and is ideal for switched-mode power supplies, motor control circuits, and other industrial applications requiring a high-voltage N-channel switch.

Key Benefits

• Low on-state resistance for reduced power loss
• High current and voltage ratings for versatile use
• Wide operating temperature range for industrial reliability
• Industry-standard TO-220 package for easy mounting