Power MOSFET N Channel 400V 120mA 25ohm TO-92
N-channel depletion-mode MOSFET, 400V, 120mA, TO-92. Low leakage, fast switching, ideal for power management.
The Microchip DN2540N3-G is an N-channel depletion-mode vertical DMOS FET, built using an advanced vertical DMOS structure and Supertex's proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of a bipolar transistor while offering the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, this device is inherently free from thermal runaway and thermally-induced secondary breakdown, ensuring reliable operation in demanding environments.
The low-threshold, normally-on DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speed are required. Its low ON-resistance and low input and output leakage contribute to efficient performance, while immunity to secondary breakdown enhances durability in high-voltage circuits.
- Channel Type: N Channel
- Drain Source Voltage (Vds): 400V
- Continuous Drain Current (Id): 120mA
- Drain Source On-State Resistance: 25Ω
- Transistor Case Style: TO-92
- Transistor Mounting: Through Hole
- Power Dissipation: 1W
- No. of Pins: 3
- Operating Temperature Max: 150°C
This compact, through-hole device is designed for a variety of power management and communications networking applications, delivering dependable performance in a small footprint.
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