Power MOSFET N-Channel 50V 500mA SOT-23 Diode

The BSN20-7 from Diodes Incorporated is an N-channel enhancement-mode field effect transistor, engineered for high-efficiency power management. This MOSFET minimises on-state resistance (RDS(on)) while delivering superior switching performance, making it ideal for a broad range of applications.

With a drain-source voltage of 50V and a continuous drain current of 500mA, this transistor provides reliable performance in compact designs. Its low on-resistance (typ. 1.3Ω at VGS=10V, ID=0.22A) and low input capacitance ensure efficient operation, while fast switching speed and low leakage currents enhance system stability.

Key Features

• N-channel enhancement mode MOSFET
• Low on-resistance (typical 1.3Ω)
• Fast switching speed
• Low input/output leakage
• Drain-source voltage: 50V @ TA=+25°C
• Gate-source voltage: ±20V @ TA=+25°C
• Continuous drain current: 500mA @ TA=+25°C
• Pulsed drain current: 1.2A
• Power dissipation: 600mW
• Operating temperature range: -55°C to +150°C
• Compact SOT-23 package

Applications

• Backlighting
• DC-DC converters
• Power management functions

This MOSFET is supplied in a SOT-23 surface-mount package and is suitable for a wide range of low-power switching applications. Its robust design ensures reliable operation across a wide temperature range, making it a versatile choice for modern electronic designs.