SMD N Channel Power MOSFET, Digital FET, SOT-23, 680mA, 25V

This surface mount, N channel logic level enhancement mode digital FET in a SOT-23 package features high cell density DMOS technology. The technology has been specifically tailored to minimise on-state resistance whilst maintaining low gate drive conditions.

It offers excellent on-state resistance even at gate drive voltages as low as 2.5V, making it highly efficient for low-power and battery-operated applications. Key electrical specifications include a drain to source voltage (Vds) of 25V, a continuous drain current (Id) of 680mA, and a power dissipation of 350mW. It also features a low on-state resistance of 330mΩ at a gate-to-source voltage of 4.5V.

Designed for use in battery circuits using either one lithium or three cadmium or NHM cells, this component is also suitable for inverters and high-efficiency miniature discrete DC/DC conversion. It is commonly utilised in compact electronic devices such as cellular phones and pagers.

With an operating temperature range of -55°C to 150°C, it is built for demanding environments. The device is a 3-pin surface mount component, weighing just 0.035 grams with physical dimensions of 43 mm in height, 33 mm in width, and 15 mm in depth.