SMD P-Channel Power MOSFET, 60V, 90mA, 14Ω, SOT-23

The ZVP3306F is a robust P-Channel Enhancement Mode Vertical DMOS Power MOSFET, designed for efficient power management and switching applications in a compact surface-mount package. Operating at a drain-source voltage (Vds) of -60V and a continuous drain current (Id) of 90mA, it offers reliable performance for low-power circuits. With a drain-source on-state resistance (Rds(on)) of just 14Ω (tested at 10V), it ensures minimal power loss and high efficiency during operation.

Housed in a space-saving SOT-23 case style, this MOSFET is ideal for modern, high-density PCB designs. Its surface-mount construction allows for automated assembly, streamlining production. The device features a maximum gate-source threshold voltage of 3.5V, making it compatible with standard logic-level control signals from microcontrollers and other digital ICs.

Built to handle demanding environments, it has a power dissipation rating of 330mW and can operate at temperatures up to 150°C maximum. This makes it suitable for applications where thermal management is critical. The component is supplied on tape and reel for compatibility with pick-and-place manufacturing equipment, ensuring consistent and reliable placement.

Key Specifications

• Channel Type: P-Channel
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 90mA
• Drain-Source On-State Resistance (Rds(on)): 14Ω @ 10V
• Gate-Source Threshold Voltage (Vgs(th) Max): 3.5V
• Power Dissipation: 330mW
• Package / Case: SOT-23 (Surface Mount)
• Number of Pins: 3
• Maximum Operating Temperature: +150°C

This high-performance MOSFET from Diodes Incorporated is a trusted solution for designers seeking a compact, efficient, and reliable switching component for a wide range of electronic projects.