STMicroelectronics PNP Bipolar Transistor, 80V 10A, TO-220

This STMicroelectronics PNP Complementary Power Transistor is manufactured using low voltage Multi Epitaxial Planar technology, ensuring reliable and efficient performance. Designed for general purpose linear and switching applications, this bipolar junction transistor (BJT) offers a low collector-emitter saturation voltage, which helps to minimise power loss and improve overall circuit efficiency.

The fast switching speed makes it highly suitable for applications requiring rapid transition between states, providing smooth and responsive operation in demanding environments. With a maximum collector-emitter voltage of 80V and a continuous collector current of 10A, this component delivers robust power handling capabilities.

Encased in a TO-220 package, this through-hole mounting transistor features 3 pins for secure and straightforward installation on printed circuit boards. The component boasts a minimum DC current gain (hFE) of 120 and can operate at temperatures up to 150°C, ensuring stability under thermal stress.

Measuring just 43mm in height, 33mm in width, and 15mm in depth, with a lightweight design of only 2.604 grams, it is ideal for space-constrained and weight-sensitive assemblies.