STMicroelectronics STP12NM50 N-Channel Power MOSFET, 550V, 12A, TO-220

The STP12NM50 is a 550V N-channel Power MOSFET from STMicroelectronics, engineered with the advanced MDmesh™ technology. This innovative design combines the multiple drain process with the PowerMESH™ horizontal layout, delivering extremely low on-resistance, high dv/dt capability, and excellent avalanche characteristics. The proprietary strip technique ensures superior dynamic performance, making it ideal for demanding industrial applications.

With a continuous drain current of 12A and an on-state resistance of just 0.35 ohms, this MOSFET is optimised for high-efficiency power conversion. It features low input capacitance and gate charge, reducing switching losses and improving overall system efficiency. The device is 100% avalanche tested, guaranteeing reliability in harsh operating conditions, and offers a low gate input resistance for improved switching speed.

Key Benefits

• High dv/dt and avalanche capabilities for robust performance
• Low input capacitance and gate charge for efficient switching
• Low gate input resistance for faster response
• Tight process control and high manufacturing yields ensure consistency

Applications

This through-hole MOSFET in a TO-220 package is suitable for a wide range of industrial applications, including power supplies, inverters, and motor control circuits. Its 160W power dissipation and 150°C maximum operating temperature make it a reliable choice for high-power designs. The 3-pin configuration and standard TO-220 footprint facilitate easy integration into existing circuits.

Technical Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 550V
• Continuous Drain Current (Id): 12A
• On-State Resistance (Rds(on)): 0.35 ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 4V
• Power Dissipation: 160W
• Transistor Case Style: TO-220
• TransistorMount