STMicroelectronics STP80NF10 Power MOSFET, N Channel, 100 V, 80 A, TO-220
STP80NF10 power MOSFET with 100V, 80A, 0.015ohm resistance. TO-220 package, through-hole mount. Ideal for DC-DC converters.
The STP80NF10 is a 100V N-channel STripFET™ II Power MOSFET from STMicroelectronics, engineered using the unique STripFET process. Specifically designed to minimize input capacitance and gate charge, this MOSFET is an ideal primary switch in advanced, high-efficiency isolated DC-DC converters for telecom and computer applications. Its low gate charge drive requirements make it suitable for any application demanding efficient power switching.
This device delivers improved gate charge and lower power dissipation, meeting today's challenging efficiency requirements. With exceptional dv/dt capability and 100% avalanche testing, the STP80NF10 ensures robust performance in demanding environments. The application-oriented characterization guarantees reliable operation across industrial, communications, and networking systems.
Key Specifications
- N Channel configuration
- Drain Source Voltage (Vds): 100V
- Continuous Drain Current (Id): 80A
- Drain Source On-State Resistance: 0.015 ohm
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 3V
- Power Dissipation: 300W
- No. of Pins: 3 Pins
- Operating Temperature Max: 175°C
- Dimensions: Height 43mm, Width 33mm, Depth 15mm
- Weight: 2 grams
The STP80NF10 is a high-performance solution for designers seeking efficiency and reliability in power conversion systems.
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