STMicroelectronics STW4N150 Power MOSFET, N Channel, 1.5kV, 4A, 7 ohm, TO-247,

The STMicroelectronics STW4N150 is a high-performance 1500V N-channel Power MOSFET, engineered using the well-established high-voltage MESH OVERLAY™ process. This advanced technology, combined with a strengthened layout and a proprietary edge termination structure, delivers the industry's lowest RDS(on) per unit area, along with unrivalled gate charge and exceptional switching characteristics. The result is a component designed to significantly reduce power dissipation and meet the demanding efficiency requirements of modern industrial applications.

A standout feature of this device is its 100% avalanche ruggedness testing, ensuring reliability under high-stress conditions. Its intrinsic capacitances and total gate charge (Qg) are meticulously minimised, which directly contributes to its high-speed switching capabilities and overall efficiency. With a robust TO-247 through-hole package, it is built for durability and effective thermal management in demanding environments.

Key Features

• Developed with the high-voltage MESH OVERLAY™ process for superior performance.
• Offers the lowest RDS(on) per area and excellent gate charge for high efficiency.
• 100% avalanche tested for enhanced reliability and ruggedness.
• Minimised intrinsic capacitances and Qg facilitate high-speed switching.
• Robust TO-247 through-hole package for reliable mounting and heat dissipation.

This Power MOSFET is an ideal solution for designers seeking to optimise power conversion systems, offering a blend of high voltage handling, low conduction losses, and fast switching to push the boundaries of performance and energy savings in industrial settings.