Ultrafast Recovery Diode 1kV 20A Single

The STMicroelectronics Ultrafast Recovery Diode delivers high reverse voltage capability, making it suitable for demanding electronics. Engineered for low leakage current and regularly reproducible characteristics, this diode provides robust construction for heavy-duty applications requiring long-term reliability. The improved low leakage current performance offers a thermal runaway guard band, ensuring stable operation under stress.

Key Features

• High frequency and high pulsed current operation
• High junction temperature capability
• Very low conduction and switching losses
• 50A RMS forward current
• 1.8°C/W junction to case thermal resistance

With a repetitive peak reverse voltage of 1kV and an average forward current of 20A, this single configuration diode is built for efficiency. It features a maximum forward voltage of 1.3V, a reverse recovery time of 42ns, and can handle a forward surge current of up to 180A. The maximum operating temperature is 175°C.

Housed in a DOP-3I case style with 2 pins, the component measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a weight of 4.46 grams.