TOSHIBA NPN Bipolar Transistor, 230V, 15A, 150W, TO-3P

The TOSHIBA NPN Bipolar Transistor is a silicon device housed in a TO-3P package, designed for through-hole mounting. Featuring a high collector voltage, this transistor is commonly used for power amplification applications where reliable and robust performance is required. Its construction and electrical characteristics make it a suitable component for demanding circuit designs.

Key Specifications

This bipolar junction transistor (BJT) offers a collector to emitter voltage (Vce) of 230V and a collector to base voltage of 230V. It supports a continuous collector current (Ic) of 15A and handles a power dissipation of 150W. The device operates with a maximum junction temperature of 150°C. It provides a DC current gain (hFE) of 80 minimum, with a gain of 35 at a 7A collector current. Additionally, it features a collector to emitter saturation voltage of 3V and a breakdown voltage of 230V. The transition frequency is rated at 30MHz.

Physical Characteristics and Applications

Measuring 43 mm in height, 33 mm in width, and 15 mm in depth, its through-hole design ensures secure mounting and ease of soldering. This versatile NPN transistor is suitable for a wide range of applications, including signal processing, power management, portable devices, consumer electronics, and industrial equipment.